Knowledge

1, Mechanism of diode failure in communication scenarios Material degradation caused by thermal stress High temperature is the primary cause of diode failure in communication equipment. Experimental d

1, Analysis of diode capacitance characteristics (1) Capacitor composition and frequency response The capacitance of a diode is composed of barrier capacitance (CB) and diffusion capacitance (CD). Whe

一,ESD threat and TVS diode protection mechanism 1. ESD threat characteristics Energy and waveform: ESD pulses have the characteristics of high voltage (thousands of volts) and short duration (nanoseco

Analysis of Linear Characteristics of PIN Diode 1. Definition and testing method of linearity Linearity refers to the degree of linear relationship between the output signal of a device and the input

一, Temperature tolerance: performance guarantee in extreme environments The working temperature range of communication equipment is usually -40 ℃ to+85 ℃, and may even reach -55 ℃ to+125 ℃ in some spe

一, The core mechanism of performance degradation of RF diodes 1. Accumulation of defects in the composite area During the long-term operation of RF diodes, the number of non radiative recombination ce

1, The physical essence and failure mechanism of reverse recovery time The physical process of charge storage effect When the diode switches from forward conduction state to reverse cutoff state, the

1, Testing standards and specification system The reliability testing of diodes in the communication industry must comply with international authoritative standards, among which Telcordia GR-468 "

一, The core requirement of communication equipment for diode response speed The demand for diode response speed in communication equipment stems from three major technical challenges: High speed signa

Composition and influencing factors of diode power consumption 1. Power consumption during conduction When the diode is conducting in the forward direction, the product of the PN junction voltage drop

一, Precise control of physical location layout 1. Optimization of spatial coupling between protection nodes and interference sources TVS diodes should be deployed in the intersection area between sign

一, Light source driving and light signal emission 1. Electro optic conversion of semiconductor laser diodes (LDs) Semiconductor laser diodes (LDs) achieve electro-optical conversion by injecting curre