P-Channel Power MOSFE

P-Channel Power MOSFE

MOSFET FDD4141

Description

FDD4141 datasheet:

 

FDD4141 Product details
General Description

This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on)and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.

Features

Max rDS(on)= 12.3mΩat VGS= -10V, ID= -12.7A

Max rDS(on)= 18.0mΩat VGS= -4.5V, ID= -10.4A

High performance trench technology for extremely low rDS(on)

Qualified to AEC Q101

RoHS Compliant

 

FDD4141

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