Power MOSFET 10N60

Power MOSFET 10N60,10N60 DATASHEET:

Features

 Low RDS(on)

 Low gate charge (typ. Qg = 31.4 nC)

100% UIS tested

RoHS compliant

Applications 

Power factor correction.

Switched mode power supplies.

LED driver.

Absolute Maximum Ratings

10N60 MOSFET: High Performance Power Transistors

The 10N60 MOSFET is a high-performance power transistor that is fabricated using advanced planar VDMOS technology. This results in a device that offers low conduction resistance, superior switching performance, and high avalanche energy.

One of the key features of this MOSFET is its low RDS(on), which helps to ensure efficient power transfer by minimizing power losses. Additionally, it has low gate charge (typical Qg = 31.4 nC), which means that it can be easily controlled using a low-voltage signal.

To ensure optimal performance and reliability, every 10N60 MOSFET is 100% tested for UIS (Unclamped Inductive Switching) to ensure that it can safely withstand high voltage transients and protect against damage from unexpected voltage spikes.

The 10N60 MOSFET is RoHS compliant, which means that it is free from hazardous materials and meets the environmental standards set by the European Union.

Overall, the 10N60 MOSFET is an excellent choice for a wide range of high-power applications, such as power supplies, motor control, high-frequency inverters, and other industrial-grade applications. With its superior performance and reliability, this MOSFET is sure to help you achieve optimal results in your power electronics projects.

FRQ:

Q: How long is your delivery time?

A: The general delivery time is 1-3 weeks after receiving your order confirmation. Anther, if we have the goods in stock, it will only take 1-2 days. 

Q: Do you provide sample ? Is it free? 

A: If the sample is low value, we will provide 20-30 pcs for your to test.

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