Mosfet 2n7002

Mosfet 2n7002

N-channel MOSFET ,transistor 2N7002

Description

2N7002 MOSFET (N-Channel),N-channel vertical D-MOS transistor, 2N7002 datasheet:



FEATURE 

High density cell design for low RDS

Voltage controlled small signal switch 

Rugged and reliable 

High saturation current capability


MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

1(001)


ELECTRICAL CHARACTERISTICS (Ta=25 )

2(001)

2N7002: The Reliable and Rugged High-Saturation Current Switch


2N7002 is a popular N-channel MOSFET with high saturation current capability, a voltage-controlled small signal switch and a high density cell design. It is widely used in different applications for switching and amplification purposes.


The N-channel MOSFET is designed to act as an electronic switch that is controlled by voltage. In comparison to traditional bipolar transistors, MOSFETs require less drive current, are easier to drive, and have a much faster switching speed. The 2N7002 model is particularly capable of handling high saturation current of up to two Amperes and exhibits low on-resistance (RDS) of around 5 ohms. The low RDS of 2N7002 is because of its high cell density design which allows the MOSFET to offer better efficiency and current handling capabilities than other transistors.


One of the most significant advantages of using 2N7002 is its reliability and ruggedness. The MOSFET has a sturdy construction and provides excellent thermal performance that makes it suitable for harsh industrial operating environments. The MOSFET is also well-suited for automotive applications, such as motor control and LED lighting systems due to its high current handling capabilities and reliable operation.


Aside from its reliability and ruggedness, 2N7002 is also cost-effective and easy-to-use. It is suitable for low power applications that require high saturation current capability, such as switching and amplifier circuits. Moreover, 2N7002 is easy to integrate with digital circuits thanks to its logic-level output.


To use 2N7002 in applications, some precautions need to be taken. For instance, it is necessary to avoid exceeding the maximum ratings of drain-source voltage, gate-source voltage, and drain current. Failure to comply with these ratings can lead to device damage and inefficiency. Therefore, it is essential to consider the MOSFET's parameters during the design phase, such as RDS(on), threshold voltage, and gate capacitance.


2N7002 is an excellent choice for voltage-controlled small signal switching applications. Its high current handling capabilities, reliability, and ruggedness are well-suited for a wide range of applications, from industrial to automotive and consumer electronics. Therefore, it's not surprising that 2N7002 has become an industry standard in various applications, and it is readily available from different electronic component suppliers worldwide.







FRQ

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A: Diodes, transistors, Mosfet, Bridge

 

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A: Usually is SPQ


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