MMBT5551

Product Introduction:

basic characteristics
MMBT5551 is an NPN transistor fit for circuit designs calling for NPN transistors.

With 160V, collector emitter voltage (Vceo) shows that the transistor can resist reverse voltages up to 160V.

The highest collector current, fit for medium-power uses, is 0.6A.

The highest power dissipation, suited for low to medium power applications, is 0.3W.

Usually spanning 180 to 240, DC current gain (hFE) indicates that the transistor has strong amplification capacity.

The characteristic frequency, fit for some high-frequency uses, is 80MHz.

Adopting SOT-23 packaging, this compact surface mount packaging fit for high-density circuit board design.

Usually about 0.5V, saturation voltage (Vce) is rather low, which helps lower power consumption and increase efficiency.

Cut off current (Iceo): Usually in the tens of nanoamps range, the quite modest cut-off current indicates that the device's leakage current in the cut-off state is also rather small.

Lead free materials: Complying with RoHS rules, this eco-friendly product devoid of dangerous elements like mercury and lead is.

Datasheet:

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