SILICON Transistor S8550

Transistor S8550 datasheet:

FEATURES

Complimentary to S8050 

Collector current: IC=0.5A

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Parameter 

Symbol Test conditions Min Max Unit 

Collector-base breakdown voltage 

V(BR)CBO 

IC = -100μA, IE=0 

-40 V 

Collector-emitter breakdown voltage 

V(BR)CEO IC =-1mA, IB=0 -25 V 

Emitter-base breakdown voltage 

V(BR)EBO 

IE= -100μA, IC=0 

-5 V 

Collector cut-off current 

ICBO VCB= -40V, IE=0 -0.1 

μA 

Collector cut-off current 

ICEO VCE= -20V, IB=0 -0.1 

μA 

Emitter cut-off current 

IEBO VEB= -3V, IC=0 -0.1 

μA 

hFE(1) VCE= -1V, IC= -50mA 120 400 

DC current gain 

hFE(2) VCE= -1V, IC= -500mA 50 

Collector-emitter saturation voltage 

VCE(sat) IC=-500mA, IB= -50mA -0.6 V 

Base-emitter saturation voltage 

VBE(sat) 

IC=-500mA, IB= -50mA -1.2 V 

Transition frequency 

fT 

VCE= -6V, IC= -20mA 

f=30MHz 

150 MHz 

ELECTRICAL CHARACTERISTICS (Ta=25 )

Transistor S8550, also known as PNP Bipolar Junction Transistor, is a popular electronic component used in a variety of applications. This transistor can handle collector currents of up to 700mA and collector-emitter voltages of up to 20 volts, making it suitable for many low-power applications. 

One of the key features of the S8550 transistor is its complementarity with the UTC S8050 transistor, which is an NPN Bipolar Junction Transistor. This feature makes it an ideal choice for applications requiring power amplification or simple switching circuits. 

Another important feature of the S8550 transistor is that it is halogen-free, which is environmentally friendly and considered to be a significant advantage in modern electronic manufacturing. The use of halogen-free materials in electronic components is rapidly becoming a standard practice in the industry.

Some common applications of the S8550 transistor include audio amplifiers, microphone preamplifiers, and voltage regulators. Additionally, it is also used in low-power switching circuits such as LED drivers, motor controllers, and relays. 

When using S8550 transistors, it is essential to keep in mind some operating parameters. For instance, the maximum gain of this transistor is around 630, and its maximum power dissipation is 625 milliwatts. Another crucial factor to consider is the base-emitter voltage, which typically ranges between 0.6 volts to 0.7 volts. 

S8550 transistor is a versatile and reliable component, suitable for a wide range of low-power applications. Its complementarity with the UTC S8050, high collector current, and emitter-collector voltage make it an ideal choice for several power amplification and switching circuits. The fact that it is halogen-free makes it an environmentally friendly choice as well.

FRQ

Q: Do you provide sample ? Is it free? 

A: If the sample is low value, we will provide 20-30 pcs for your to test.

Q: Where is your factory located?

A: In Zhejiang Province

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