1N4148/1N4448 High-speed Switch Diode Parameters

Feature

SOD27 glass encapsulation (DO-35)

High switching speed: maximum reverse recovery time of 4 nanoseconds

Continuous reverse voltage: maximum 75 volts

Repetitive peak reverse voltage: maximum 100 volts

Repetitive peak forward current: maximum 450 mA.

Main parameters of 1N4148 and 1N4448:

Forward average current IF=200mA

Non repetitive forward peak current IFSM=2A

Dissipated power Pd=500mW

Maximum junction temperature Tj=200 ℃

Storage temperature Tstg=-65 ℃~200 ℃

Junction capacitance Cd=4pF

Forward recovery voltage Vfr=2.5V

Reverse leakage current IR=25nA~50 μ A