What is the development direction of diodes in 6G communication technology?

1, High frequency and high-speed: device innovation that breaks through physical limits
6G terahertz communication (0.1-10 THz) presents unprecedented performance requirements for diodes. Traditional Schottky diodes are approaching their theoretical limits in the millimeter wave frequency band, while new material systems based on gallium nitride (GaN) and silicon carbide (SiC) are opening up new space. For example, the GaN based terahertz diode developed by Purple Mountain Laboratory can support a single carrier transmission rate of 100 Gbps by optimizing the quantum well structure, increasing the cutoff frequency to 3 THz, and reducing parasitic capacitance to below 0.1 pF.
At the process level, 3D integration technology has become a key breakthrough. The "chip level reconfigurable antenna" solution proposed by ZTE integrates PIN diodes with liquid crystal materials and piezoelectric materials on a single chip, and dynamically reconstructs the antenna pattern through electric field control. This design reduces the number of antennas in 6G base stations by 60% and increases spectral efficiency by three times, clearing the way for large-scale commercial use of terahertz communication.
2, Integrated Sensing: From Signal Processing to Environmental Perception
The "integrated sensing" feature of 6G requires diodes to have both communication and sensing functions. The innovative application of quantum well diodes (QWDs) provides a solution for this. By precisely controlling the band structure of InGaN/GaN multi quantum wells, researchers have achieved a 26.9 nm spectral overlap between the emission spectrum and the detection spectrum. This "self receiving" characteristic enables a single diode to simultaneously transmit optical signals and detect ambient light, laying the foundation for integrated chips for visible light communication and perception.
In specific applications, the Gallium Nitride Optoelectronic Integrated System (MGOS) developed by China Mobile has achieved bidirectional optical communication at 2 kbps and can sense changes in light intensity of 0.1 lux. If this technology is applied to 6G vehicle networking, it can enable vehicles to achieve V2X communication through LED headlights, while using changes in light intensity to detect road obstacles, compressing communication latency from 10 ms in 5G to below 0.1 ms.
3, Intelligent endogenous: from passive components to active participants
The "endogenous intelligence" architecture of 6G promotes the evolution of diodes towards programmability and adaptability. The concept of "semantic communication diode" proposed by Southeast University embeds AI algorithms at the device level to enable the diode to autonomously recognize signal features and adjust its working mode. For example, when dealing with sudden traffic in the industrial Internet of Things, the diode array can be dynamically reconfigured into low-power mode or high-speed mode, resulting in a 40% increase in energy efficiency ratio.
More cutting-edge explorations are focused on the field of neuromorphic diodes. The memristor diode hybrid structure developed by Beijing University of Posts and Telecommunications simulates the plasticity of human brain synapses and achieves millisecond level response in 6G base station signal scheduling. This intelligent diode array can reduce base station energy consumption by 35% and support 10 times the connection density of 5G.
4, Extreme environmental adaptability: supporting the integration of air, space, earth, and sea
The demand for 6G's "sky, earth, and sea" coverage poses a severe challenge to the reliability of diodes. In the satellite communication scenario, the radiation resistant GaN diode developed by China Aerospace Science and Technology Corporation has increased its total dose radiation resistance to 100 Mrad by introducing a silicon carbide substrate and a diamond heat dissipation layer. The operating temperature range has been extended to -55 ℃ to 200 ℃, which can meet the 10-year lifespan requirements of low orbit satellites.
For deep-sea communication, the piezoelectric ceramic diode composite device developed by the Institute of Acoustics of the Chinese Academy of Sciences directly converts underwater acoustic signals into electrical signals, eliminating the analog front-end circuit of traditional transducers. In the 2000 meter deep sea test, the device achieved stable transmission at 10 kbps and reduced power consumption by 70% compared to traditional solutions, providing key support for the construction of 6G underwater observation networks.
5, Industrial Ecological Restructuring: From Components to System Solutions
The development of diodes is driving the value reconstruction of the communication industry chain. The concept of "Photon Engine" proposed by Huawei integrates laser diodes, photodetectors, and DSP chips in a single package, reducing the power consumption of 6G optical modules by 50% and shrinking their size to one-third of 5G products. This system level innovation transforms diodes from a cost center to a value creation center, and it is expected that by 2030, high-end diodes will account for over 15% of the BOM cost of 6G base stations.
At the standard setting level, 3GPP has included the "Smart Diode Interface Protocol" in the 6G R18 version specification, requiring diodes to support dynamic switching of at least 16 working modes. This has prompted international giants such as ON Semiconductor and ROHM to accelerate the layout of programmable diode product lines, and it is expected that the first smart diode chip that meets the 6G standard will be launched in 2026.

https://www.trrsemicon.com/transistor/npn-transistor-bc817-25.html