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Does chip shortage have a significant impact on the supply of diodes in energy equipment?

一, Supply and demand imbalance: The energy equipment diode market is facing structural shortages
1. Explosive growth on the demand side
The global energy equipment market is experiencing a dual expansion: on the one hand, the sales of new energy vehicles have jumped from 12.866 million units in 2023 to over 20 million units in 2025, with a single vehicle using over 2000 diodes; On the other hand, the installed capacity of energy storage is expanding at a compound annual growth rate of 45%. By 2025, the global demand for energy storage diodes will reach 9 billion, and the market size will exceed 4 billion yuan. The photovoltaic field is also showing an explosive trend, with an expected global increase in photovoltaic installed capacity of 400 GW by 2025, corresponding to a demand for over 5 billion diodes.

2. Multiple constraints on the supply side
Concentration risk of production capacity: More than 70% of the global automotive grade diode production capacity is concentrated in a few companies such as Anshi Semiconductor and Infineon, and the fluctuations in production capacity at their Dongguan and German Julin factories directly affect global supply. The takeover of Ansea Semiconductor by the Dutch government in 2025 directly led to the shutdown of Honda factories in Mexico and triggered a shortage of BMS modules for energy storage systems.
Certification cycle barrier: Energy equipment diodes need to pass strict certifications such as AEC-Q101 and UL, with a certification cycle of up to 6-18 months. An international energy storage company revealed that the delay in diode certification for its new product resulted in a 3-month delay in project delivery and a direct loss of over 20 million US dollars.
Raw material bottleneck: The tight supply of silicon carbide (SiC) substrates has become a bottleneck. By 2025, the penetration rate of SiC diodes will increase from 12% to 38%, but 90% of the global 6-inch SiC substrate production capacity is monopolized by American companies such as Wolfspeed and Cree, resulting in a yield rate of only 60% for domestic manufacturers, leading to an annual increase of 7% -9% in SiC diode prices.
二, Technological substitution: innovation breakthrough in crisis
1. Material iteration acceleration
Silicon based optimization: Trench Schottky diodes use deep trench etching technology to reduce the forward voltage drop from 0.45V to 0.28V, increasing system efficiency by 0.4 percentage points. They have been widely adopted by companies such as Sunac Power.
Breakthrough in wide bandgap: Domestic Yangjie Technology launches 1700V SiC Schottky diode, breaking international monopoly and maintaining a gross profit margin of over 50%; Huawei Power S technology uses GaN diodes to reduce energy consumption of supercapacitor energy storage systems by 10%.
2. Encapsulation Revolution
Three dimensional vertical structure: The vertical PiN diode optimizes the current path to increase the current density to over 200A/cm ², reducing the number of converter station components by 30%.
Intelligent integration: Littelfuse has launched a diode+temperature sensing chip integrated module, priced at $0.45 with a gross profit margin of 60%, promoting the evolution of BMS modules towards miniaturization.
3. System level innovation
Topology optimization: PCS (energy storage converter) using SiC MOSFET+diode hybrid scheme, with switching frequency increased from 16kHz to 50kHz and system loss reduced by 40%.
Software compensation: BYD dynamically adjusts the working parameters of diodes through AI algorithms, extending the lifespan of IGBT modules by 20% and partially replacing the demand for high-end diodes.
三, Domestic substitution: dual drivers of policy and market
1. Capacity expansion accelerates
Rise of top enterprises: Yangjie Technology ranks first in China with a market share of 19.8%. Its 12 inch automotive grade diode production line will be put into operation in 2025, with an annual production capacity of 5 billion pieces; Silan Micro SiC diodes have a market share of 28% and have entered Tesla's supply chain.
Vertical integration ecosystem: System manufacturers such as BYD and Sunac Power have jointly established a "Materials Chip Packaging and Testing" alliance with diode companies, reducing the delivery cycle from 20 weeks to 8 weeks.
2. Policy dividend release
Support for the "Dual Carbon" Strategy: The country will include energy storage diodes in the "Action Plan for the Development of Basic Electronic Components Industry" and provide a 30% tax reduction for SiC substrate research and development.
Export control countermeasures: China implements license management for high-end diode exports, forcing domestic enterprises to increase self-sufficiency rates and achieve a localization rate of 70% by 2025.
3. Breakthrough in the international market
Emerging market penetration: The photovoltaic markets in India and Southeast Asia have exploded, and Chinese diode companies will increase their overseas market share from 32% to 40% by 2025, leveraging their cost-effectiveness advantages.
Enhancement of standard discourse power: The "Technical Specification for Energy Storage Diodes" led by China has become a draft international standard of IEC, breaking the monopoly of the United States and Europe.
 

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