IRLML5203 Frequently Asked Questions

Fault in this transistor: MOS transistors have different functions in different topologies and circuits. For example, in LLC, the speed of the bulk diode is also an important factor affecting the reliability of MOS transistors. Due to the fact that diodes themselves are parasitic parameters, it is difficult to distinguish between leakage source diode faults and leakage source voltage faults. The solution to diode faults is mainly analyzed by combining with its own circuit.

Example: Using a lithium battery protection board as a charging and discharging switch

In general, MOS is in an on or off state, without considering the switching speed of MOS, a fast closing circuit is designed on the overall circuit.

Pay attention to the following points:

1. Pay attention to the DS voltage and leave sufficient margin for design and selection. According to BVDDS of 1.5 times MOS transistor

2. Pay attention to the working current and protection current. The experience value is 3-4 times or more, which is the ID (DC) of MOS.

3. Multiple MOSs are connected in parallel, and the current margin should be as large as possible.

4. The plan of using high current should comprehensively consider packaging heat dissipation and internal resistance.

5. It is important to understand the driving voltage and try to keep the MOS working in a fully open state. For microcontroller driven solutions, it is recommended to use MOS with a low open state as much as possible.

In addition, when selecting MOS transistors, attention should be paid to the channel type, BVDDS, ID conduction current, VGS (th), RDSON and other parameters.