What is the domestic substitution situation of diodes in the field of communication?

一, The underlying logic of domestic substitution: dual drive of technological iteration and market pressure
1. The gap in high-end production capacity has spurred demand for substitution
As the world's largest manufacturer of communication equipment, China accounts for 40% of the global demand for diodes, but its self-sufficiency rate for high-end products is less than 35%. Taking 5G base stations as an example, a single device needs to be equipped with over 10000 high-frequency, low loss diodes, which have long relied on international giants such as Infineon and Anson. According to data from 2025, the production capacity gap of China's automotive grade diodes will reach 3.8 billion units, mainly concentrated in high-end categories such as SiC MOSFETs. This structural imbalance forces downstream enterprises to accelerate the introduction of domestic suppliers, forming a market pattern of "demand driven substitution".
2. Policy dividends release technological transformation momentum
The national integrated circuit industry policy clearly requires the domestication rate of diodes to be increased to 70% by 2025, and a 15% value-added tax reduction will be given to products that meet automotive grade standards. Taking China Resources Microelectronics as an example, its IDM model integrates the entire chain of design, manufacturing, and packaging testing. Through the expansion of 12 inch wafer fabs, it has increased the local diode production capacity to 200 billion units per year, accounting for 40% of the global supply. This policy, coupled with the dual drive of capital, significantly shortens the verification cycle of domestically produced devices.
3. Third generation semiconductors open a window for substitution
The breakthrough of SiC and GaN materials provides an opportunity for domestic substitution to overtake and change lanes. By 2025, the market share of domestically produced SiC diodes is expected to increase to 25%, and their high efficiency and high power density characteristics perfectly meet the demand for 6G terahertz communication. For example, the third-generation 650V/1200V SiC Schottky diode developed by Basic Semiconductor has increased current density by 30% and surge capability by 50% through 6-inch wafer technology, and has entered the supply chain systems of Huawei and ZTE.
二, Alternative progress in core areas: from point breakthroughs to systematic coverage
1. Communication base station: domestic substitution acceleration of high-frequency components
In the field of 5G base stations, domestic high-frequency diodes have achieved a key breakthrough. Zhanxin Electronics' 650V/1200V SiC diode has passed industrial certification and replaced imported components in Shenzhen Megmeet's charging module, increasing system efficiency by 0.2%. More noteworthy is that the silicon carbide MPS Schottky diode integrated by Sanan adopts a hybrid PiN design, which has been widely used in traction drive, vehicle charging and other scenarios, and its reliability index meets the requirements of AEC-Q101 standard.
2. Optical Communication: The Domestic Rise of Modulation Diodes
Optical communication is the largest application field of diodes, with a market size of 1.13 billion yuan by 2024. According to data from Beijing Boyan Zhishang, the proportion of modulation diodes used for laser radar has reached 27.8%, and is maintaining an annualized growth rate of 15%. Suzhou Gude has integrated more than 50 series and 7000 varieties of product lines, and its rectifier diode sales have been among the top in China for ten consecutive years. It has successfully entered the Data Center Interconnect (DCI) market, directly competing with Cisco and Huawei.
3. Internet of Vehicles: Ecological Reconstruction of Vehicle Grade Devices
The intelligentization of automobiles has spurred an explosive demand for high reliability diodes. Yangjie Technology's rectifier bridge stack products have passed ISO 26262 functional safety certification, achieving domestic substitution in BYD and NIO's intelligent cockpits. Its ESD protection diode can clamp electrostatic pulses to below 12V, meeting the CAN-BUS bus protection requirements. More importantly, local manufacturers have established joint laboratories with automotive companies to build a collaborative verification system from components to systems, significantly shortening the development cycle of automotive grade products.
三, Challenge and Breakthrough: From Technological Substitution to Ecological Substitution
1. Technological iteration risk: disruptive impact of new materials
New semiconductor materials such as quantum dots and perovskites may overturn existing technological approaches. For example, the sixth generation SiC diode launched by Rui Neng Semiconductor reduces the conduction voltage drop by 25% through thin film technology, but this technological leap requires companies to continue investing in research and development. In 2025, the upgrade of export controls on GaN epitaxial wafers by the US BIS further highlights the urgency of material autonomy and controllability.
2. Ecological barriers: adaptation challenges from devices to systems
International giants build ecological barriers through "devices+algorithms+toolchains". For example, Infineon's AURIX ™ The microcontroller is deeply coupled with SiC diodes to achieve dynamic response at the 0.1 μ s level. Domestic manufacturers need to break through this system level advantage. For example, Huada Jiutian has acquired chips and semiconductors, integrated RF simulation and 3D packaging design capabilities, and formed a full process toolchain covering circuit design to physical verification, shortening the chip design cycle by 40%.
3. Globalization Layout: Diversifying Geopolitical Risks
Trade frictions are forcing companies to restructure their supply chains. Changjing Technology has formed a full industry chain layout from chip design to packaging and testing through the acquisition of Jiangsu Hyde Semiconductor, and has built production bases in Southeast Asia to achieve a flexible supply model of "Chinese research and development+overseas manufacturing". This global layout not only reduces the impact of tariff barriers, but also enhances environmental compliance capabilities such as carbon footprint tracing.
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