MOSFET Characteristic

Compared with bipolar transistors MOSFET have the following characteristics.

(1) FET is a voltage control device, which controls ID (drain current) through VGS (gate source voltage);

(2) The control input current of FET is very small, so its input resistance (107~1012 Ω) is very large.

(3) It uses most carriers to conduct electricity, so its temperature stability is good;

(4) The voltage amplification coefficient of the amplification circuit composed of the transistor is smaller than that of the amplification circuit composed of the triode;

(5) The radiation resistance of FET is strong;

(6) The noise is low because there is no shot noise caused by the electronic diffusion of chaotic motion.