Main parameters of 2N5551

Main parameters of 2N5551:

Collector emitter maximum withstand voltage VCEO=160V

Collector base maximum withstand voltage VCBO=180V

Emitter base maximum withstand voltage VEBO=6V

Maximum collector current ICM=600mA

Maximum collector power consumption PCM=600mW

Maximum junction temperature Tj=150 ℃

Storage temperature range Tstg=-55 ℃~150 ℃

DC amplification factor HFE=50-200

Characteristic frequency fT=100~300MHz